USPTO Patents Application 09732928

Application No. 09/732,928
Docket No. 740107-136
Page 2

In the Claims :

1 . (Original) An electron beam proximity exposure apparatus, comprising:
an electron beam source which emits a collimated electron beam;

a mask substrate on which a plurality of masks with apertures are formed;
a mask moving mechanism which moves the mask substrate; and
a stage which holds and moves an object,

wherein the mask moving mechanism moves the mask substrate so that one of the
plurality of masks is arranged on a path of the electron beam in proximity to a surface of the
object, and a pattern corresponding to the aperture of the one of the plurality of masks is
exposed on the surface of the object with the electron beam having passed through the
aperture.

2. (Original) The electron beam proximity exposure apparatus as defined in claim 1,
wherein:

the plurality of masks are arranged with a distance away from each other on the mask
substrate; and

portions of the plurality of the masks of the mask substrate are thinner than other
portions.

3. (Original) The electron beam proximity exposure apparatus as defined in claim 1,
wherein at least two of the plurality of masks formed on the mask substrate have an identical
pattern.

4. (Original) The electron beam proximity exposure apparatus as defined in claim 3,
wherein:

the plurality of masks are arranged with a distance away from each other on the mask
substrate; and

portions of the plurality of the masks of the mask substrate are thinner than other
portions.

Application No. 09/732,928
Docket No. 740107-136
Page 3

5. (Original) The electron beam proximity exposure apparatus as defined in claim 1,
wherein:

each pattern exposed on the object is exposed by two exposures in which a first mask
and a second mask are respectively used; and

the plurality of masks formed on the mask substrate comprise a set of the first mask
and the second mask.

6. (Original) The electron beam proximity exposure apparatus as defined in claim 5,
wherein:

the plurality of masks are arranged with a distance away from each other on the mask
substrate; and

portions of the plurality of the masks of the mask substrate are thinner than other
portions.

7. (Original) The electron beam proximity exposure apparatus as defined in claim 5,
wherein at least two of the plurality of masks formed on the mask substrate have an identical
pattern.

8. (Original) The electron beam proximity exposure apparatus as defined in claim 7,
wherein:

the plurality of masks are arranged with a distance away from each other on the mask
substrate; and

portions of the plurality of the masks of the mask substrate are thinner than other
portions.

9. (Currently Amended) A mask unit which is used in an electron beam proximity
exposure apparatus comprising an electron beam source which emits a collimated electron
beam, a mask with an aperture which is arranged on a path of the electron beam, and a stage
which holds and moves an object, wherein the mask is arranged in proximity to a surface of

Application No. 09/732,928
Docket No. 740107-136
Page 4

the object and a pattern corresponding to the aperture of the mask is exposed on the surface
of the object with the electron beam having passed through the aperture,

wherein the mask unit comprises a single mask substrate on which a plurality of the
masks are forme d, at least two of the plurality of masks formed on the mask substrate have an
identical pattern .